NE3508M04-A is a GaAs HJ-FET for low-noise amplification in RF applications, available in a plastic SMD package. It exhibits a noise figure of 0.45 dB and a gain of 14.0 dB at 2.0 GHz, with a 1 dB compression point of +18.0 dBm at a bias of 3.0 V and 30 mA drain current.
RF Mosfet HFET 2V 10mA 2GHz 14dB 18dBm F4TSMM, M04
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE3508M04-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-343F |
