California Eastern Laboratories - CEL SMD 2V MOSFET Transistor NE3210S01-T1B

Description
RF MOSFET GAAS HJ-FET 2V SMD Product overview: NE3210S01-T1B from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3210S01-T1B can be used for catalog matching and distributor lookup.
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Description
RF MOSFET GAAS HJ-FET 2V SMD Product overview: NE3210S01-T1B from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3210S01-T1B can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
SMD 2V MOSFET Transistor - 285-NE3210S01-T1B - ERSAELECTRONICS PTE. LTD.
Singapore
SMD 2V MOSFET Transistor
285-NE3210S01-T1B
SMD 2V MOSFET Transistor 285-NE3210S01-T1B
RF MOSFET GAAS HJ-FET 2V SMD Product overview: NE3210S01-T1B from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3210S01-T1B can be used for catalog matching and distributor lookup.

RF MOSFET GAAS HJ-FET 2V SMD Product overview: NE3210S01-T1B from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3210S01-T1B can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3210S01-T1B - 091507-NE3210S01-T1B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3210S01-T1B
091507-NE3210S01-T1B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3210S01-T1B 091507-NE3210S01-T1B
Manufacturer: CEL Win Source Part Number: 091507-NE3210S01-T1B Packaging: Reel - TR Voltage Rating: 4V Current Rating: 15mA Frequency: 12GHz Current - Test: 10mA Gain: 13.5dB Transistor Polarity: HFET Voltage - Test: 2V Noise Figure: 0.35dB Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMD Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 091507-NE3210S01-T1B
Packaging: Reel - TR
Voltage Rating: 4V
Current Rating: 15mA
Frequency: 12GHz
Current - Test: 10mA
Gain: 13.5dB
Transistor Polarity: HFET
Voltage - Test: 2V
Noise Figure: 0.35dB
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMD
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
RF FETs, MOSFETs - NE3210S01-T1B - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
NE3210S01-T1B
RF FETs, MOSFETs NE3210S01-T1B
FET RF 4V 12GHZ S01

FET RF 4V 12GHZ S01

Supplier's Site
RF JFET Transistors Super Lo Noise HJFET - 130-NE3210S01-T1B - Utmel Electronic Limited
Hong Kong, China
RF JFET Transistors Super Lo Noise HJFET
130-NE3210S01-T1B
RF JFET Transistors Super Lo Noise HJFET 130-NE3210S01-T1B
RF JFET Transistors Super Lo Noise HJFET

RF JFET Transistors Super Lo Noise HJFET

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors
Product Number 285-NE3210S01-T1B 091507-NE3210S01-T1B NE3210S01-T1B 130-NE3210S01-T1B
Product Name SMD 2V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3210S01-T1B RF FETs, MOSFETs RF JFET Transistors Super Lo Noise HJFET
Package Type Tape & Reel (TR) SOT3; SMD 4-SMD
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
Polarity HFET N-Channel; N-CHANNEL
Transistor Technology / Material GaAs HJ-FET
Power Gain 13.5 dB 13.5 dB
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