RF MOSFET GAAS HJ-FET 2V SMD Product overview: NE3210S01-T1B from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3210S01-T1B can be used for catalog matching and distributor lookup.
Manufacturer: CEL
Win Source Part Number: 091507-NE3210S01-T1B
Packaging: Reel - TR
Voltage Rating: 4V
Current Rating: 15mA
Frequency: 12GHz
Current - Test: 10mA
Gain: 13.5dB
Transistor Polarity: HFET
Voltage - Test: 2V
Noise Figure: 0.35dB
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMD
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
RF JFET Transistors Super Lo Noise HJFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | 285-NE3210S01-T1B | 091507-NE3210S01-T1B | NE3210S01-T1B | 130-NE3210S01-T1B |
| Product Name | SMD 2V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3210S01-T1B | RF FETs, MOSFETs | RF JFET Transistors Super Lo Noise HJFET |
| Package Type | Tape & Reel (TR) | SOT3; SMD | 4-SMD | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | ||
| Polarity | HFET | N-Channel; N-CHANNEL | ||
| Transistor Technology / Material | GaAs HJ-FET | |||
| Power Gain | 13.5 dB | 13.5 dB |