The HAT2165H-EL-E is a silicon N-channel power MOSFET designed for power switching applications, housed in an LFPAK package with a mass of 0.080 g. It has a drain-to-source voltage rating of 30 V and a continuous drain current of 55 A. The device features a typical on-resistance of 2.5 mΩ at a gate-source voltage of 10 V and a channel-to-case thermal resistance of 4.17 °C/W. The maximum channel temperature is 150 °C, and it supports a peak drain current of 220 A under pulse conditions. The MOSFET meets RoHS requirements and is rated for standard industrial applications. The part is supplied in tape and reel packaging.
Trans MOSFET N-CH Si 30V 55A 5-Pin(4+Tab) LFPAK T/R Product overview: HAT2165H-EL-E from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2165H-EL-E can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-HAT2165H-EL-E |
| Product Name | 30V 55A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 30 volts |
| PD | 30000 milliwatts |
