California Eastern Laboratories - CELRF FETs, MOSFETsCE7613M4-C2
Description
RF MOSFET 2V 4MINIMOLD
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Description
RF MOSFET 2V 4MINIMOLD
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Datasheet
Datasheet Summary Powered by GS/AI
RF low noise FET for Ku-band LNB applications in a flat-lead 4-pin thin-type super minimold package, with a drain-to-source voltage rating of 3 V max, drain current of 15 mA max, total power dissipation of 125 mW, and a minimum noise figure of 0.35 dB at 12 GHz and 10 mA drain current. Operating temperature range is -55 to +125 °C.
Datasheet Summary Powered by GS/AI
RF low noise FET for Ku-band LNB applications in a flat-lead 4-pin thin-type super minimold package, with a drain-to-source voltage rating of 3 V max, drain current of 15 mA max, total power dissipation of 125 mW, and a minimum noise figure of 0.35 dB at 12 GHz and 10 mA drain current. Operating temperature range is -55 to +125 °C.