California Eastern Laboratories - CEL RF FETs, MOSFETs CE3521M4

Description
RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-Super Mini Mold
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Description
RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-Super Mini Mold
Request a Quote
Datasheet
Datasheet Summary
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The CE3521M4 is a 20 GHz RF low noise FET for use in DBS LNB and microwave communication systems, packaged in a flat-lead 4-pin thin-type super minimold. It operates with a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 15 mA. At 2 V and 10 mA, it exhibits a typical noise figure of 0.70 dB and an associated gain of 11.9 dB. Total power dissipation is rated at 125 mW, with a maximum channel temperature of +150 °C and an operating temperature range of -55 to +125 °C.

Datasheet Summary
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The CE3521M4 is a 20 GHz RF low noise FET for use in DBS LNB and microwave communication systems, packaged in a flat-lead 4-pin thin-type super minimold. It operates with a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 15 mA. At 2 V and 10 mA, it exhibits a typical noise figure of 0.70 dB and an associated gain of 11.9 dB. Total power dissipation is rated at 125 mW, with a maximum channel temperature of +150 °C and an operating temperature range of -55 to +125 °C.

Suppliers

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Product
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Supplier Links
RF FETs, MOSFETs - CE3521M4-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
CE3521M4-ND
RF FETs, MOSFETs CE3521M4-ND
RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-Super Mini Mold

RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-Super Mini Mold

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number CE3521M4-ND
Product Name RF FETs, MOSFETs
Package Type SC-82A, SOT-343
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