CE3514M4 is a 12GHz low noise FET for microwave communication systems, housed in a flat-lead 4-pin thin-type super minimold package. It operates with a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 15 mA. The device exhibits a typical noise figure of 0.42 dB and associated gain of 12.2 dB at VDS=2V, ID=10mA, f=12GHz. Total power dissipation is 125 mW, with a maximum channel temperature of 150°C and operating temperature range of -55°C to +125°C. It meets RoHS requirements and is designed for applications such as DBS LNB stages.
RF Mosfet pHEMT FET 2V 10mA 12GHz 12.2dB 125mW 4-Super Mini Mold
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | CE3514M4-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
