California Eastern Laboratories - CEL RF FETs, MOSFETs CE3512K2

Description
RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X
  • RF FETs, MOSFETs - CE3512K2-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - CE3512K2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
CE3512K2-ND
RF FETs, MOSFETs CE3512K2-ND
RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X

RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Transistors
Product Number CE3512K2-ND
Product Name RF FETs, MOSFETs
Package Type 4-Micro-X
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 192352301 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200L-060
Specs
Transistor Type IGBT
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR - ALD310702APCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR
ALD310702APCL
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1730S-TD-E - 855057-2SA1730S-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1730S-TD-E
2SA1730S-TD-E
Specs
Package Type SOT3
View Details