The CE3512K2 is a 12 GHz RF low noise FET designed for KU band LNB first-stage applications, housed in a Micro-X plastic package with an air cavity. It operates with a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 15 mA, delivering a typical noise figure of 0.30 dB and associated gain of 13.7 dB at VDS = 2 V, ID = 10 mA, and f = 12 GHz. The device dissipates up to 125 mW and operates across a temperature range of -55°C to +125°C. It meets RoHS compliance and is supplied in 8 mm embossed tape reels with a minimum order quantity of 10,000 pieces.
RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | CE3512K2-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-Micro-X |
