California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5753-A

The NE678M04 is a silicon NPN high-frequency transistor for RF applications from 100 MHz to 3 GHz, housed in a low-profile M04 package with a height of 0.59 mm and a SOT-343 footprint. It features a transition frequency of 12 GHz, an output power at 1 dB compression of 18 dBm at 1.8 GHz, and a linear gain of 13 dB at 1.8 GHz. The device operates with a maximum collector current of 100 mA, collector-emitter voltage of 6 V, and total power dissipation of 205 mW. Thermal resistance from junction to ambient is 600 °C/W. The EIAJ registration number for this package is 2SC5753, and the part is RoHS compliant with Pb-free terminals.