California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A 2SC5509-T2-A

Description
Manufacturer: CEL Win Source Part Number: 1004462-2SC5509-T2-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 15GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-343 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 50 @ 10mA, 2V Maximum Power Dissipation: 190mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A - 1004462-2SC5509-T2-A - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 2SC5509-T2-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 1004462-2SC5509-T2-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 15GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-343 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 50 @ 10mA, 2V Maximum Power Dissipation: 190mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
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TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A - 1004462-2SC5509-T2-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A
1004462-2SC5509-T2-A
TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A 1004462-2SC5509-T2-A
Manufacturer: CEL Win Source Part Number: 1004462-2SC5509-T2-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 15GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-343 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 50 @ 10mA, 2V Maximum Power Dissipation: 190mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 1004462-2SC5509-T2-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB
Frequency - Transition: 15GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-343
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V
Typical Gain (hFE) (Min): 50 @ 10mA, 2V
Maximum Power Dissipation: 190mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar RF Transistors - 2SC5509-T2-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5509-T2-A
Bipolar RF Transistors 2SC5509-T2-A
RF TRANS NPN 3.3V 15GHZ SOT343

RF TRANS NPN 3.3V 15GHZ SOT343

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 1004462-2SC5509-T2-A 2SC5509-T2-A
Product Name TRANSISTORS - RF Transistors (BJT) - 2SC5509-T2-A Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT-343 SC-82A, SOT-343
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 50 dB 14 dB
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