California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5455-A

NPN epitaxial silicon transistor in a 4-pin mini mold package for medium-output RF applications, with a collector-to-emitter voltage rating of 6 V, maximum collector current of 100 mA, total power dissipation of 200 mW, and gain bandwidth product of 12.0 GHz. The device features low noise, high DC current gain (hFE 75 to 150), and reverse transfer capacitance of 0.5 to 0.7 pF. It meets operational specifications at junction temperatures up to 150 °C and is designed for use in high-frequency circuits.