California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5454-A

NPN silicon RF transistor for high-frequency applications, in a 4-pin mini mold surface mount package. Maximum collector-to-emitter voltage is 6 V, collector current is 50 mA, and total power dissipation is 200 mW. Junction temperature range is -65 °C to +150 °C. Gain bandwidth product is 14.5 GHz at 2 GHz and 20 mA collector current. Reverse transfer capacitance is 0.3 to 0.5 pF at 1 MHz. Noise figure ranges from 1.5 to 2.5 dB at 2 GHz and 5 mA collector current. DC current gain (hFE) is 75 to 150 at 20 mA collector current. Pin configuration: 1-collector, 2-emitter, 3-base, 4-emitter.