California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5011-T1-A

Description
RF TRANS NPN 12V 6.5GHZ SOT343
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Description
RF TRANS NPN 12V 6.5GHZ SOT343
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 2SC5011-T1-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5011-T1-A
Bipolar RF Transistors 2SC5011-T1-A
RF TRANS NPN 12V 6.5GHZ SOT343

RF TRANS NPN 12V 6.5GHZ SOT343

Supplier's Site Datasheet
Bipolar RF Transistors - 2SC5011-T1-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5011-T1-A-ND
Bipolar RF Transistors 2SC5011-T1-A-ND
RF Transistor NPN 12V 100mA 6.5GHz 150mW Surface Mount SOT-343

RF Transistor NPN 12V 100mA 6.5GHz 150mW Surface Mount SOT-343

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TRANSISTORS - RF Transistors (BJT) - 2SC5011-T1-A - 005892-2SC5011-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5011-T1-A
005892-2SC5011-T1-A
TRANSISTORS - RF Transistors (BJT) - 2SC5011-T1-A 005892-2SC5011-T1-A
Manufacturer: CEL Win Source Part Number: 005892-2SC5011-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 13dB Frequency - Transition: 6.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-343 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 20mA, 10V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 005892-2SC5011-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13dB
Frequency - Transition: 6.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-343
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 20mA, 10V
Maximum Power Dissipation: 150mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics
Product Category Bipolar RF Transistors Transistors RF Transistors
Product Number 2SC5011-T1-A 2SC5011-T1-A-ND 005892-2SC5011-T1-A
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 2SC5011-T1-A
Polarity NPN; NPN NPN NPN; NPN
Package Type SC-82A, SOT-343 SC-82A, SOT-343 SOT3; SOT-343
IC(max) 100 milliamps
VCEO 12 volts
Power Gain 13 dB 50 dB
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