California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A 2SC5010-T1-A

Description
Manufacturer: CEL Win Source Part Number: 005891-2SC5010-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8.5dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A - 005891-2SC5010-T1-A - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 2SC5010-T1-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 005891-2SC5010-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8.5dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A - 005891-2SC5010-T1-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A
005891-2SC5010-T1-A
TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A 005891-2SC5010-T1-A
Manufacturer: CEL Win Source Part Number: 005891-2SC5010-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8.5dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 005891-2SC5010-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 8.5dB
Frequency - Transition: 12GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-523
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 75 @ 10mA, 3V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - 2SC5010-T1-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5010-T1-A
Bipolar RF Transistors 2SC5010-T1-A
RF TRANS NPN 6V 12GHZ SOT523

RF TRANS NPN 6V 12GHZ SOT523

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 005891-2SC5010-T1-A 2SC5010-T1-A
Product Name TRANSISTORS - RF Transistors (BJT) - 2SC5010-T1-A Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT-523 SOT-523
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 75 dB 8.5 dB
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