California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A 2SC3585-T1B-A

Manufacturer: CEL
Win Source Part Number: 005853-2SC3585-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 50 @ 10mA, 6V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

RF TRANS NPN 10V 10GHZ SOT23 Product overview: 2SC3585-T1B-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 10GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 10GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC3585-T1B-A can be used for catalog matching and distributor lookup.