California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A 2SC3585-T1B-A

Description
Manufacturer: CEL Win Source Part Number: 005853-2SC3585-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 10mA, 6V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
  • TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A - 005853-2SC3585-T1B-A - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 2SC3585-T1B-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 005853-2SC3585-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 10mA, 6V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A - 005853-2SC3585-T1B-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A
005853-2SC3585-T1B-A
TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A 005853-2SC3585-T1B-A
Manufacturer: CEL Win Source Part Number: 005853-2SC3585-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 10mA, 6V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: CEL
Win Source Part Number: 005853-2SC3585-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 50 @ 10mA, 6V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar RF Transistors - 2SC3585-T1B-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC3585-T1B-A
Bipolar RF Transistors 2SC3585-T1B-A
RF TRANS NPN 10V 10GHZ SOT23

RF TRANS NPN 10V 10GHZ SOT23

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 005853-2SC3585-T1B-A 2SC3585-T1B-A
Product Name TRANSISTORS - RF Transistors (BJT) - 2SC3585-T1B-A Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 50 dB 9 dB
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