California Eastern Laboratories - CEL Bipolar RF Transistors 2SC3585-A

The 2SC3585 is an NPN silicon epitaxial transistor designed for low-noise amplification in VHF to UHF bands. It is housed in a surface-mount package with dimensions 2.8 mm × 1.5 mm × 4.1 mm. The device has a collector-to-emitter voltage rating of 10 V, a maximum collector current of 35 mA, and a total power dissipation of 200 mW. It achieves a typical noise figure of 1.8 dB and a power gain of 9 dB at 2.0 GHz, with a gain-bandwidth product of 10 GHz. The junction temperature rating is 150 °C, and the storage temperature range is -65 °C to +150 °C. The part meets RoHS compliance and is classified under standard quality grade for general electronic applications.