California Eastern Laboratories - CEL Bipolar RF Transistors 2SC3356-T1B-R25-A

NPN silicon RF transistor for microwave low-noise amplification in a 3-pin Minimold surface mount package. The device has a collector-to-emitter voltage rating of 12 V, a collector current rating of 100 mA, and a total power dissipation of 200 mW. It achieves a typical noise figure of 1.1 dB and a gain of 11 dB at 1 GHz with VCE = 10 V and IC = 7 mA. The gain-bandwidth product is 7 GHz. The transistor meets RoHS compliance and is sensitive to electrostatic discharge. The package dimensions are 2.8 mm × 2.0 mm with a height of 1.1 mm.