PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Product overview: 2SB601 from NEC Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB601 can be used for catalog matching and distributor lookup.
Manufacturer: NEC
Win Source Part Number: 1124971-2SB601
Manufacturer Homepage: www.nec.com/
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | RF Transistors |
| Product Number | 276-2SB601 | 1124971-2SB601 | 56362892 |
| Product Name | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SB601 | Transistor |
| Package Type | SOT3 |
