California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B 2SA1978-T1B

Description
Manufacturer: CEL Win Source Part Number: 11565-2SA1978-T1B Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B - 11565-2SA1978-T1B - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: CEL Win Source Part Number: 11565-2SA1978-T1B Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B - 11565-2SA1978-T1B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B
11565-2SA1978-T1B
TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B 11565-2SA1978-T1B
Manufacturer: CEL Win Source Part Number: 11565-2SA1978-T1B Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 11565-2SA1978-T1B
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB
Frequency - Transition: 5.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 15mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 11565-2SA1978-T1B
Product Name TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B
Polarity PNP; PNP
Package Type SOT3; SOT23; SOT-23
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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