California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B-A 2SA1978-T1B-A

Description
Manufacturer: CEL Win Source Part Number: 1004201-2SA1978-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: CEL Win Source Part Number: 1004201-2SA1978-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B-A - 1004201-2SA1978-T1B-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B-A
1004201-2SA1978-T1B-A
TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B-A 1004201-2SA1978-T1B-A
Manufacturer: CEL Win Source Part Number: 1004201-2SA1978-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 5.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 15mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: CEL
Win Source Part Number: 1004201-2SA1978-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB
Frequency - Transition: 5.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 15mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar RF Transistors - 2SA1978-T1B-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SA1978-T1B-A-ND
Bipolar RF Transistors 2SA1978-T1B-A-ND
RF Transistor PNP 12V 50mA 5.5GHz 200mW Surface Mount SOT-23-3

RF Transistor PNP 12V 50mA 5.5GHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category RF Transistors Transistors
Product Number 1004201-2SA1978-T1B-A 2SA1978-T1B-A-ND
Product Name TRANSISTORS - RF Transistors (BJT) - 2SA1978-T1B-A Bipolar RF Transistors
Polarity PNP; PNP PNP
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
Unlock Full Specs
to access all available technical data