California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B 2SA1977-T1B

Manufacturer: CEL
Win Source Part Number: 11563-2SA1977-T1B
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 8.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Family Name: 2SA1977
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 20mA, 8V
Maximum Power Dissipation: 200mW
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Trans RF BJT PNP 12V 0.05A 200mW / RF TRANSISTOR PNP SOT-23 Product overview: 2SA1977-T1B from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.05A, 200mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.05A, 200mW, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1977-T1B can be used for catalog matching and distributor lookup.