California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A 2SA1977-T1B-A

Manufacturer: CEL
Win Source Part Number: 127756-2SA1977-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 8.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 20mA, 8V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

RF TRANS PNP 12V 8.5GHZ SOT23

RF Transistor PNP 12V 50mA 8.5GHz 200mW Surface Mount SOT-23-3

RF TRANS PNP 12V 8.5GHZ SOT23 Product overview: 2SA1977-T1B-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8.5GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8.5GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1977-T1B-A can be used for catalog matching and distributor lookup.