California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A 2SA1977-T1B-A

Description
Manufacturer: CEL Win Source Part Number: 127756-2SA1977-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 127756-2SA1977-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A - 127756-2SA1977-T1B-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A
127756-2SA1977-T1B-A
TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A 127756-2SA1977-T1B-A
Manufacturer: CEL Win Source Part Number: 127756-2SA1977-T1B-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 127756-2SA1977-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 8.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 20mA, 8V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
12V 8.5GHZ SOT23 Bipolar Transistor
283-2SA1977-T1B-A
12V 8.5GHZ SOT23 Bipolar Transistor 283-2SA1977-T1B-A
RF TRANS PNP 12V 8.5GHZ SOT23 Product overview: 2SA1977-T1B-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8.5GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8.5GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1977-T1B-A can be used for catalog matching and distributor lookup.

RF TRANS PNP 12V 8.5GHZ SOT23 Product overview: 2SA1977-T1B-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8.5GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8.5GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1977-T1B-A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - 2SA1977-T1B-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SA1977-T1B-A
Bipolar RF Transistors 2SA1977-T1B-A
RF TRANS PNP 12V 8.5GHZ SOT23

RF TRANS PNP 12V 8.5GHZ SOT23

Supplier's Site Datasheet
Bipolar RF Transistors - 2SA1977-T1B-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SA1977-T1B-A-ND
Bipolar RF Transistors 2SA1977-T1B-A-ND
RF Transistor PNP 12V 50mA 8.5GHz 200mW Surface Mount SOT-23-3

RF Transistor PNP 12V 50mA 8.5GHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 127756-2SA1977-T1B-A 283-2SA1977-T1B-A 2SA1977-T1B-A 2SA1977-T1B-A-ND
Product Name TRANSISTORS - RF Transistors (BJT) - 2SA1977-T1B-A 12V 8.5GHZ SOT23 Bipolar Transistor Bipolar RF Transistors Bipolar RF Transistors
Polarity PNP; PNP PNP; PNP PNP
Package Type SOT3; SOT23; SOT-23 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR Tape & Reel (TR)
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Power Gain 20 dB 12 dB
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