NCEPOWER  Transistors NCE6012AS

Description
60V 12A 11mΩ@10V,12A 3W 1.8V@250uA 1 N-Channel SOP-8-4.0mm MOSFETs ROHS
  • Transistors - NCE6012AS - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 12A 11mΩ@10V,12A 3W 1.8V@250uA 1 N-Channel SOP-8-4.0mm MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE6012AS - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE6012AS
Transistors NCE6012AS
60V 12A 11mΩ@10V,12A 3W 1.8V@250uA 1 N-Channel SOP-8-4.0mm MOSFETs ROHS

60V 12A 11mΩ@10V,12A 3W 1.8V@250uA 1 N-Channel SOP-8-4.0mm MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE6012AS
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Qorvo
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-02
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
4-Channel SAB PCB with one mounted ALD810017SCLI - SABMB810017 - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
4-Channel SAB PCB with one mounted ALD810017SCLI
SABMB810017
View Details
Transistor - 54792142 - Radwell International
Fuji Electric Corp. of America
Transistor
ESAD92M-03
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR
2N3904TAR
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details