NCEPOWER  Transistors NCE0125AI

Description
TO-251 MOSFETs ROHS
  • Transistors - NCE0125AI - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE0125AI - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE0125AI
Transistors NCE0125AI
TO-251 MOSFETs ROHS

TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE0125AI
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Qorvo
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
TGF2819-FL
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
2 suppliers
Advanced Linear Devices, Inc.
MOSFET
ALD310702SAL
Specs
Transistor Type MOSFET
View Details
Igbt, 1.2Kv, 15A, Module; Continuous Collector Current Fuji Electric - 76R7170 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 1.2Kv, 15A, Module; Continuous Collector Current Fuji Electric
7MBR10SA-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1627-T-AZ - 855053-2SA1627-T-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1627-T-AZ
2SA1627-T-AZ
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details