Murata Electronics Silicon Chip Capacitors (Wire bondable) 935242522447-T3T

Description
The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.
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Description
The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.
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Suppliers

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Silicon Chip Capacitors (Wire bondable) - 935242522447-T3T - Richardson RFPD
Downers Grove, IL, United States
Silicon Chip Capacitors (Wire bondable)
935242522447-T3T
Silicon Chip Capacitors (Wire bondable) 935242522447-T3T
The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

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Technical Specifications

  Richardson RFPD
Product Category Capacitors
Product Number 935242522447-T3T
Product Name Silicon Chip Capacitors (Wire bondable)
Configuration / Form Factor Chip Capacitor
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