The WLSC (100um thick) capacitors target RF High Power applications for wireless communication (e.g: 5G), radar and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. The unique technology of integrated passive devices in silicon developed by Murata*, can solve most of the problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry-leading performance particularly in terms of capacitor stability over the full operating DC voltage & temperature range. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.
CAP SILICON 1000PF 15% 30V SMD
| Richardson RFPD | Lingto Electronic Limited | |
|---|---|---|
| Product Category | Capacitors | Capacitors |
| Product Number | 935146832410-W0T | 935146832410-W0T |
| Product Name | Silicon Chip Capacitors (Wire bondable) | Silicon Capacitors |
| Configuration / Form Factor | Chip Capacitor | |
| Capacitance Range | 1.00E-3 microF | 1.00E-3 microF |
| WVDC | 16 volts |
