Murata Electronics Silicon Capacitors 935142837522-T3T

Description
CAP SILICON 0.022UF 30V 0402
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Description
CAP SILICON 0.022UF 30V 0402
Request a Quote Datasheet

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Description
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Silicon Capacitors - 490-935142837522-T3TTR-ND - DigiKey
Thief River Falls, MN, United States
Silicon Capacitors
490-935142837522-T3TTR-ND
Silicon Capacitors 490-935142837522-T3TTR-ND
CAP SILICON 0.022UF 30V 0402

CAP SILICON 0.022UF 30V 0402

Buy Now Datasheet
Silicon Capacitors - 490-935142837522-T3TDKR-ND - DigiKey
Thief River Falls, MN, United States
Silicon Capacitors
490-935142837522-T3TDKR-ND
Silicon Capacitors 490-935142837522-T3TDKR-ND
CAP SILICON 0.022UF 30V 0402

CAP SILICON 0.022UF 30V 0402

Buy Now Datasheet
Silicon Capacitors - 490-935142837522-T3TCT-ND - DigiKey
Thief River Falls, MN, United States
Silicon Capacitors
490-935142837522-T3TCT-ND
Silicon Capacitors 490-935142837522-T3TCT-ND
CAP SILICON 0.022UF 30V 0402

CAP SILICON 0.022UF 30V 0402

Buy Now Datasheet
Silicon Chip Capacitors (Wire bondable) - 935142837522-T3T - Richardson RFPD
Downers Grove, IL, United States
Silicon Chip Capacitors (Wire bondable)
935142837522-T3T
Silicon Chip Capacitors (Wire bondable) 935142837522-T3T
The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

The Murata WBSC series capacitors are suitable for DC decoupling. The unique technology of integrated passive devices in silicon developed by Murata can solve most of the problems encountered in demanding applications. These Si capacitors in ultra-deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900 C) generating a highly pure oxide. This technology provides industry leading performances relative to the capacitor stability up to with a temperature coefficient equals to +60 ppm/K. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  DigiKey DigiKey Richardson RFPD
Product Category Capacitors Capacitors Capacitors
Product Number 490-935142837522-T3TTR-ND 490-935142837522-T3TDKR-ND 935142837522-T3T
Product Name Silicon Capacitors Silicon Capacitors Silicon Chip Capacitors (Wire bondable)
Operating Temperature -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Capacitance Range 0.0220 microF 0.0220 microF 0.0220 microF
Packing Method Tape Reel Digi-Reel®
Configuration / Form Factor Chip Capacitor
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