Description
TMR1309 is a digital omnipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It is designed for use in applications that are both power-critical and performance-demandin
g. It contains a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package, including an on-chip TMR voltage generator for precise magnetic sensing, a TMR voltage amplifier and comparator plus Schmitt trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal band gap regulator is used to provide a temperature compensated supply voltage for internal circuits, permitting a wide range of supply voltages. The TMR1309 draws only 1.5 μA resulting in ultra-low power operation. It has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in the SOT23-3 package.
SOT23-3
Features and Benefits
Tunneling magnetoresistance (TMR) technology Ultra low power consumption at 1.5 μA High frequency response: > 1 kHz Operation with north or south pole Very low switching points for ultra high sensitivity Excellent temperature stability High tolerance to external magnetic field interference RoHS & REACH compliant Compatible with a wide range of supply voltages
Applications
Position and speed sensing Proximity switches Open/close switch for portable devices
Description
TMR1309 is a digital omnipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It is designed for use in applications that are both power-critical and performance-demanding. It contains a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package, including an on-chip TMR voltage generator for precise magnetic sensing, a TMR voltage amplifier and comparator plus Schmitt trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal band gap regulator is used to provide a temperature compensated supply voltage for internal circuits, permitting a wide range of supply voltages. The TMR1309 draws only 1.5 μA resulting in ultra-low power operation. It has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in the SOT23-3 package.
SOT23-3
Features and Benefits
Tunneling magnetoresistance (TMR) technology Ultra low power consumption at 1.5 μA
High frequency response: > 1 kHz Operation with north or south pole
Very low switching points for ultra high sensitivity Excellent temperature stability
High tolerance to external magnetic field interference RoHS & REACH compliant
Compatible with a wide range of supply voltages
Applications
Position and speed sensing Proximity switches
Open/close switch for portable devices
