Multicomp, Inc. Transistor MJ11016

Description
DISCONTINUED BY MANUFACTURER, BIPOLAR TRANSISTOR, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE 120V, DC COLLECTOR CURRENT 30A, POWER DISSIPATION 200W, THROUGH HOLE MOUNTING, 2 PIN, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 18673249 - Radwell International
    Radwell International
Request a Quote
Description
DISCONTINUED BY MANUFACTURER, BIPOLAR TRANSISTOR, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE 120V, DC COLLECTOR CURRENT 30A, POWER DISSIPATION 200W, THROUGH HOLE MOUNTING, 2 PIN, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistor - 18673249 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
18673249
Transistor 18673249
DISCONTINUED BY MANUFACTURER, BIPOLAR TRANSISTOR, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE 120V, DC COLLECTOR CURRENT 30A, POWER DISSIPATION 200W, THROUGH HOLE MOUNTING, 2 PIN, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, BIPOLAR TRANSISTOR, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE 120V, DC COLLECTOR CURRENT 30A, POWER DISSIPATION 200W, THROUGH HOLE MOUNTING, 2 PIN, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 18673249
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor - QPD0030 - Qorvo
Qorvo
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
QPD0030
Specs
Transistor Technology / Material DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
GaAs Fet Switches - KS202 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS202
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB860-E - 855129-2SB860-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SB860-E
2SB860-E
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6787 - Shenzhen Shengyu Electronics Technology Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6787
Specs
Package Type TO-205AF Metal Can
Packing Method Bulk; Bulk
View Details