multicomp PRO Transistor, Bipolar, Pnp, 100V, 25A, To-247-3; Transistor Polarity Multicomp Pro TIP36C

Description
TRANSISTOR, BIPOLAR, PNP, 100V, 25A, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Description
TRANSISTOR, BIPOLAR, PNP, 100V, 25A, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The TIP36C is a PNP bipolar junction transistor designed for general purpose power amplifier and switching applications. It is housed in a TO-3P package with dimensions ranging from 20.63 mm to 22.38 mm in length, 15.38 mm to 16.2 mm in width, and 18.5 mm to 21.5 mm in height. The device has a collector-emitter voltage rating of 100 V, a continuous collector current of 25 A, and a total power dissipation of 125 W at 25°C, derating at 1 W/°C above that temperature. The thermal resistance from junction to case is 1°C/W. Operating and storage junction temperatures range from -65°C to +150°C. DC current gain is specified at a minimum of 25 at a collector current of 1.5 A and a collector-emitter voltage of 4 V. The current gain-bandwidth product is 3 MHz minimum at a collector current of 1 mA. The part meets RoHS standards.

Datasheet Summary
Powered by GS/AI

The TIP36C is a PNP bipolar junction transistor designed for general purpose power amplifier and switching applications. It is housed in a TO-3P package with dimensions ranging from 20.63 mm to 22.38 mm in length, 15.38 mm to 16.2 mm in width, and 18.5 mm to 21.5 mm in height. The device has a collector-emitter voltage rating of 100 V, a continuous collector current of 25 A, and a total power dissipation of 125 W at 25°C, derating at 1 W/°C above that temperature. The thermal resistance from junction to case is 1°C/W. Operating and storage junction temperatures range from -65°C to +150°C. DC current gain is specified at a minimum of 25 at a collector current of 1.5 A and a collector-emitter voltage of 4 V. The current gain-bandwidth product is 3 MHz minimum at a collector current of 1 mA. The part meets RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Transistor, Bipolar, Pnp, 100V, 25A, To-247-3; Transistor Polarity Multicomp Pro - 95M9106 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Pnp, 100V, 25A, To-247-3; Transistor Polarity Multicomp Pro
95M9106
Transistor, Bipolar, Pnp, 100V, 25A, To-247-3; Transistor Polarity Multicomp Pro 95M9106
TRANSISTOR, BIPOLAR, PNP, 100V, 25A, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, PNP, 100V, 25A, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 95M9106
Product Name Transistor, Bipolar, Pnp, 100V, 25A, To-247-3; Transistor Polarity Multicomp Pro
Polarity PNP
Unlock Full Specs
to access all available technical data