multicomp PRO Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro TIP29C

Description
TRANS, NPN, 100V, 1A, 150DEG C, 30W; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
Description
TRANS, NPN, 100V, 1A, 150DEG C, 30W; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The TIP29C is an NPN silicon power transistor in a TO-220 package, designed for high-power switching and amplification applications. It has a collector-emitter voltage rating of 100V, a continuous collector current of 1A, and a maximum power dissipation of 30W at 25°C case temperature. The transistor dissipates 0.24W per °C above 25°C, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 4.167°C/W. Its collector-emitter saturation voltage is 0.7V maximum at Ic=1A, current gain-bandwidth product is 3MHz minimum at Ic=200mA, and DC current gain ranges from 15 to 75 at Ic=1A. The package dimensions are specified with a case-connected collector pin, and the device is rated for operation and storage temperatures from -65°C to +150°C.

Datasheet Summary
Powered by GS/AI

The TIP29C is an NPN silicon power transistor in a TO-220 package, designed for high-power switching and amplification applications. It has a collector-emitter voltage rating of 100V, a continuous collector current of 1A, and a maximum power dissipation of 30W at 25°C case temperature. The transistor dissipates 0.24W per °C above 25°C, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 4.167°C/W. Its collector-emitter saturation voltage is 0.7V maximum at Ic=1A, current gain-bandwidth product is 3MHz minimum at Ic=200mA, and DC current gain ranges from 15 to 75 at Ic=1A. The package dimensions are specified with a case-connected collector pin, and the device is rated for operation and storage temperatures from -65°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro - 38K8301 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro
38K8301
Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro 38K8301
TRANS, NPN, 100V, 1A, 150DEG C, 30W; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes

TRANS, NPN, 100V, 1A, 150DEG C, 30W; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 38K8301
Product Name Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro
Transistor Type Trans, Npn, 100V, 1A, 150Deg C, 30W; Transistor Polarity Multicomp Pro
Unlock Full Specs
to access all available technical data

Similar Products

1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Dual N-Channel Matched MOSFET Pair - ALD1101APAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
3 suppliers
Transistor - 67779831 - Radwell International
Fuji Electric Corp. of America
View Details