The TIP29A is an NPN bipolar power transistor rated for 60 V collector-emitter voltage, 30 W total power dissipation at 25°C case temperature, and a continuous collector current of 3 A. It features a collector-emitter saturation voltage of 0.7 V maximum at 1 A collector current and a current gain-bandwidth product of 3 MHz minimum. The device is housed in a TO-220 package with dimensions between 14.68 mm and 15.31 mm in height, 9.78 mm and 10.42 mm in width, and 5.01 mm and 6.52 mm in thickness. Thermal resistance from junction to case is 4.167 °C/W, and the operating junction temperature ranges from -65 °C to +150 °C. The transistor meets RoHS compliance.
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 60 V, 3 MHz, 30 W, 3 A, 40 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 38K8300 |
| Product Name | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 60 V, 3 Mhz, 30 W, 3 A, 40 Rohs Compliant Multicomp Pro |
| Polarity | NPN |
