multicomp PRO Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant Multicomp Pro TIP147

Description
Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 125 W, -10 A, 1000 RoHS Compliant: Yes
Description
Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 125 W, -10 A, 1000 RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The TIP147 is a PNP Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage rating of 100 V minimum, a continuous collector current of 10 A, and a total power dissipation of 125 W at 25°C case temperature. The device has a maximum collector-emitter saturation voltage of 3 V at 10 A collector current and 40 mA base current, with a minimum DC current gain of 1000 at 5 A collector current. Thermal resistance from junction to case is 1 °C/W, and the operating junction temperature range is -65°C to +150°C. The transistor is packaged in a TO-247 (3P) case, with dimensions between 20.63 mm and 22.38 mm in length, 15.38 mm and 16.2 mm in width, and 1.9 mm to 2.7 mm in thickness. It includes a built-in base-emitter shunt resistor and complies with the specified electrical and thermal performance limits.

Datasheet Summary
Powered by GS/AI

The TIP147 is a PNP Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage rating of 100 V minimum, a continuous collector current of 10 A, and a total power dissipation of 125 W at 25°C case temperature. The device has a maximum collector-emitter saturation voltage of 3 V at 10 A collector current and 40 mA base current, with a minimum DC current gain of 1000 at 5 A collector current. Thermal resistance from junction to case is 1 °C/W, and the operating junction temperature range is -65°C to +150°C. The transistor is packaged in a TO-247 (3P) case, with dimensions between 20.63 mm and 22.38 mm in length, 15.38 mm and 16.2 mm in width, and 1.9 mm to 2.7 mm in thickness. It includes a built-in base-emitter shunt resistor and complies with the specified electrical and thermal performance limits.

Suppliers

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Product
Description
Supplier Links
Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant Multicomp Pro - 95M9101 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant Multicomp Pro
95M9101
Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant Multicomp Pro 95M9101
Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 125 W, -10 A, 1000 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 125 W, -10 A, 1000 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 95M9101
Product Name Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant Multicomp Pro
Polarity PNP
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