PNP silicon high voltage transistor in TO-39 metal can package, rated for a collector-emitter voltage of 200 V and a continuous collector current of 1 A. Power dissipation is 10 W at Tc = 25°C with a derating of 200 mW/°C above 25°C. Operating and storage junction temperature range is from -65°C to +200°C. Thermal resistance from junction to case is 17.5°C/W and from junction to ambient is 150°C/W. DC current gain (hFE) ranges from 30 to 150 at Ic = 50 mA and Vce = 10 V. Transition frequency exceeds 15 MHz. The device meets RoHS standards.
TRANS, PNP, -200V, -1A, 200DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-200V; Transition Frequency ft:15MHz; Power Dissipation Pd:10W; DC Collector Current:-1A; DC Current Gain hFE:30hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8642 |
| Product Name | Trans, Pnp, -200V, -1A, 200Deg C, 10W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Pnp, -200V, -1A, 200Deg C, 10W; Transistor Polarity Multicomp Pro |
