NPN silicon planar transistor in a TO-18 metal can package, designed for low-power switching and amplification applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 50 mA, and a power dissipation of 1.2 W at Tc = 25°C. The junction temperature range is -65 to +200°C. The transition frequency is up to 60 MHz at Ic = 0.5 mA, and the DC current gain hFE ranges from 30 to 900 depending on collector current. Input and output capacitances are both 6 pF. Thermal resistance from junction to case is 146 °C/W. Dimensions are 5.24-5.84 mm in height and 4.52-4.97 mm in body diameter.
TRANS, NPN, 60V, 0.05A, 200DEG C, 1.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:50mA; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8637 |
| Product Name | Trans, Npn, 60V, 0.05A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 60V, 0.05A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro |