multicomp PRO Transistor, Bipolar, Pnp, 300V, 500Ma, To-126-3; Transistor Polarity Multicomp Pro MJE350

Description
TRANSISTOR, BIPOLAR, PNP, 300V, 500mA, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Description
TRANSISTOR, BIPOLAR, PNP, 300V, 500mA, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The MJE350 is a PNP silicon transistor in a TO-126 package, designed for line-operated switching and regulator applications. It has a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 20 W at 25°C. The package dimensions range from 7.4 to 7.8 mm in length, 10.5 to 10.8 mm in width, and 2.4 to 2.7 mm in thickness. The junction-to-ambient thermal resistance is 83.3 °C/W, and the operating and storage junction temperature range is from -65°C to +150°C. The DC current gain (hFE) ranges from 30 to 240 at a collector current of 0.05 A and collector-emitter voltage of 10 V.

Datasheet Summary
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The MJE350 is a PNP silicon transistor in a TO-126 package, designed for line-operated switching and regulator applications. It has a collector-emitter voltage rating of 300 V, a continuous collector current of 500 mA, and a power dissipation of 20 W at 25°C. The package dimensions range from 7.4 to 7.8 mm in length, 10.5 to 10.8 mm in width, and 2.4 to 2.7 mm in thickness. The junction-to-ambient thermal resistance is 83.3 °C/W, and the operating and storage junction temperature range is from -65°C to +150°C. The DC current gain (hFE) ranges from 30 to 240 at a collector current of 0.05 A and collector-emitter voltage of 10 V.

Suppliers

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Supplier Links
Transistor, Bipolar, Pnp, 300V, 500Ma, To-126-3; Transistor Polarity Multicomp Pro - 08N8076 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Pnp, 300V, 500Ma, To-126-3; Transistor Polarity Multicomp Pro
08N8076
Transistor, Bipolar, Pnp, 300V, 500Ma, To-126-3; Transistor Polarity Multicomp Pro 08N8076
TRANSISTOR, BIPOLAR, PNP, 300V, 500mA, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, PNP, 300V, 500mA, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 08N8076
Product Name Transistor, Bipolar, Pnp, 300V, 500Ma, To-126-3; Transistor Polarity Multicomp Pro
Polarity PNP
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