The BUW12A is an NPN silicon power transistor designed for high-voltage switching in industrial applications. It is housed in a TO-247 package with dimensions ranging from 20.63 to 22.38 mm in length, 15.38 to 16.2 mm in width, and 1.9 to 2.7 mm in thickness. The transistor has a collector-emitter breakdown voltage of 450 V minimum and a continuous collector current rating of 8 A. Maximum power dissipation is 125 W at 25°C, with a thermal resistance junction-to-case of 1.2 °C/W. The collector-emitter saturation voltage is 1.5 V maximum at a collector current of 6 A and base current of 1.2 A. The operating and storage junction temperature range is -65°C to +150°C. Pin configuration is standard for TO-247: base, collector, emitter.
BIPOLAR TRANSISTOR, NPN, 450V; Transistor Polarity:NPN; Collector Emitter Voltage Max:450V; Continuous Collector Current:8A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 78M7043 |
| Product Name | Bipolar Transistor, Npn, 450V; Transistor Polarity Multicomp Pro |
| Polarity | NPN |