N-channel logic level enhancement mode MOSFET with a 50 V drain-source voltage, 200 mA continuous drain current, and a maximum power dissipation of 200 mW. It is packaged in SOT-323 with dimensions of 1.8-2.2 mm in height, 1.15-1.35 mm in width, and 2.2-2.4 mm in length. The device has a typical on-state resistance of 1.4 Ω at VGS=10 V and a gate threshold voltage range of 0.5-1.5 V. Thermal resistance is 417 °C/W. It operates from -55 °C to +150 °C junction temperature and is supplied in 3,000-piece tape and reel packaging.
MOSFET, N CHANNEL, 50V, 1.4OHM, 200mA, SOT-323-3; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:200mW RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 66W0894 |
| Product Name | Mosfet, N Channel, 50V, 1.4Ohm, 200Ma, Sot-323-3; Channel Type Multicomp Pro |
| Polarity | N-Channel |