The BDX33C is a Darlington transistor with a monolithic NPN structure and built-in base-emitter shunt resistor, designed for high-current switching applications. It is packaged in a TO-220 case measuring 14.68 to 15.31 mm in length, 9.78 to 10.42 mm in width, and 5.01 to 6.52 mm in height. The device has a collector-emitter voltage rating of 100 V, a continuous collector current of 10 A, and a total power dissipation of 70 W at 25°C, derating at 0.56 W/°C. The thermal resistance from junction to case is 1.78 °C/W. Minimum DC current gain is 750 at I_C = 3 A and V_CE = 3 V, with a collector-emitter saturation voltage of 2.5 V under the same conditions. Operating and storage junction temperature range is -65°C to +150°C. Pin configuration is: 1 - Base, 2 - Collector, 3 - Emitter, 4 - Collector (case).
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 70 W, 10 A, 750 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 37K9422 |
| Product Name | Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 70 W, 10 A, 750 Rohs Compliant Multicomp Pro |
| Polarity | NPN |
