multicomp PRO Darlington Transistor, Pnp, -100V; Transistor Polarity Multicomp Pro BDV66B

The BDV66B is a PNP Darlington transistor designed for high-current switching applications. It is packaged in a through-hole format with a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 16 A. The device dissipates up to 125 W at 25°C case temperature, with a thermal resistance from junction to case of 1°C/W. It features a maximum collector-emitter saturation voltage of 2 V at 10 A collector current and includes a built-in base-emitter shunt resistor. The minimum current gain bandwidth product is 6 MHz, and the output capacitance is 450 pF at 10 V. Operating and storage junction temperatures range from -65°C to +150°C. Physical dimensions are specified in millimetres, with case measurements between 20.63 mm and 22.38 mm in length, 15.38 mm and 16.2 mm in width, and 1.9 mm to 2.7 mm in thickness.