multicomp PRO Bipolar Transistor, Npn, 80V; Transistor Polarity Multicomp Pro BD179

Description
BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes
Description
BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The BD179 is an NPN bipolar transistor designed for medium power linear switching applications in a TO-126 package, measuring 7.4-7.8 mm in length, 10.5-10.8 mm in width, and 2.4-2.7 mm in thickness. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 3 A, and a power dissipation of 1.25 W at 25°C, derating at 10 mW/°C above 25°C. The junction-to-ambient thermal resistance is 100°C/W, and the operating and storage junction temperature range is -65°C to +150°C. Current gain (hFE) ranges from 40 to 250 depending on collector current, with a transition frequency of 3 MHz. Collector-emitter saturation voltage and base-emitter on voltage are specified under pulse test conditions.

Datasheet Summary
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The BD179 is an NPN bipolar transistor designed for medium power linear switching applications in a TO-126 package, measuring 7.4-7.8 mm in length, 10.5-10.8 mm in width, and 2.4-2.7 mm in thickness. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 3 A, and a power dissipation of 1.25 W at 25°C, derating at 10 mW/°C above 25°C. The junction-to-ambient thermal resistance is 100°C/W, and the operating and storage junction temperature range is -65°C to +150°C. Current gain (hFE) ranges from 40 to 250 depending on collector current, with a transition frequency of 3 MHz. Collector-emitter saturation voltage and base-emitter on voltage are specified under pulse test conditions.

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Bipolar Transistor, Npn, 80V; Transistor Polarity Multicomp Pro - 08N7623 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 80V; Transistor Polarity Multicomp Pro
08N7623
Bipolar Transistor, Npn, 80V; Transistor Polarity Multicomp Pro 08N7623
BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 08N7623
Product Name Bipolar Transistor, Npn, 80V; Transistor Polarity Multicomp Pro
Polarity NPN
Package Type TO-3
IC(max) 3000 milliamps
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