The BD139-10 is an NPN bipolar transistor in a TO-126 package, with a collector-emitter voltage rating of 80 V, a continuous collector current of 1.5 A, and a power dissipation of 12.5 W at 25 °C case temperature. It operates with a junction temperature range of -55 °C to +150 °C and has a junction-to-case thermal resistance of 10 °C/W. The device meets RoHS compliance. Its DC current gain (hFE) ranges from 25 to 250 depending on collector current and voltage conditions. The physical dimensions are 7.2-8.38 mm in length, 10.16-11.43 mm in width, and 2.29-3.04 mm in thickness. Pin configuration is emitter, collector, base.
Bipolar (BJT) Single Transistor, NPN, 80 V, 12.5 W, 1.5 A, 63 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 67T1024 |
| Product Name | Bipolar (Bjt) Single Transistor, Npn, 80 V, 12.5 W, 1.5 A, 63 Rohs Compliant Multicomp Pro |
| Polarity | NPN |