NPN silicon AF transistor designed for audio driver and output stages, with a continuous collector current of 1 A and a collector-emitter voltage rating of 80 V. It is packaged in an SOT-89 surface mount case with dimensions ranging from 4.5 to 4.7 mm in length, 2.3 to 2.7 mm in width, and 1.5 mm in height. The device has a total power dissipation of 500 mW, a collector-emitter saturation voltage of 0.5 V at 500 mA collector current, and a DC current gain ranging from 63 to 250. It operates within a junction and storage temperature range of -65 to +150 °C and is RoHS compliant.
Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mW, 1 A, 250 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 67T1003 |
| Product Name | Bipolar (Bjt) Single Transistor, Npn, 80 V, 500 Mw, 1 A, 250 Rohs Compliant Multicomp Pro |
| Polarity | NPN |
