The BC635 is an NPN silicon planar epitaxial bipolar transistor in a TO-92 package, rated for a collector-emitter voltage of 45 V, a continuous collector current of 1 A, and a power dissipation of 800 mW at 25°C. It derates at 6.4 mW/°C above 25°C. The junction-to-ambient thermal resistance is 156°C/W, and the operating and storage junction temperature range is -55°C to +150°C. The transistor has a minimum DC current gain of 63 for Group-10 and 100 for Group-16 at 5 mA and 150 mA collector current, respectively. The collector-emitter saturation voltage is less than 0.5 V at 500 mA collector current and 50 mA base current. It is RoHS compliant and meets AEC-Q200 qualification standards. The physical dimensions are 4.32 to 5.33 mm in body length, 4.45 to 5.2 mm in body width, and 3.18 to 4.19 mm in body thickness.
BIPOLAR TRANSISTOR, NPN, 45V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage Max:45V; Continuous Collector Current:1A; Power Dissipation:800mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 08N8059 |
| Product Name | Bipolar Transistor, Npn, 45V, To-92; Transistor Polarity Multicomp Pro |
| Polarity | NPN |