PNP epitaxial planar silicon transistor in a TO-39 metal can package, with a maximum collector-emitter voltage of 60 V, collector current of 1 A, and power dissipation of 1 W at 25°C. The device has a transition frequency of 50 MHz, DC current gain ranging from 40 to 250, and collector-emitter saturation voltage of 1 V at 1 A collector current and 100 mA base current. Operating and storage temperature range is -65°C to +200°C. Thermal resistance from junction to ambient is 17.5°C/W.
BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:600mA; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 96K6849 |
| Product Name | Bipolar Transistor, Pnp, -60V; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
| Package Type | TO-3 |
| IC(max) | 600 milliamps |
