NPN silicon bipolar transistor in TO-92 package for general purpose amplifier applications with a maximum collector current of 100mA and collector-emitter voltage of 50V. Power dissipation is 350mW at 25°C, derating at 2.8mW/°C above 25°C. Junction temperature range is -55°C to +150°C. Current gain hfe ranges from 80 to 500 depending on operating conditions. Includes collector-emitter saturation voltage of 0.6V at 100mA collector current and 5mA base current. Thermal resistance junction-to-ambient is 357°C/W.
BIPOLAR TRANSISTOR, NPN, 50V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:100mA; Power Dissipation:350mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 08N8054 |
| Product Name | Bipolar Transistor, Npn, 50V, To-92; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
