The BC109C is an NPN silicon planar epitaxial transistor in a TO-18 metal can package, designed for general-purpose amplifier and switch applications. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 200 mA, and a power dissipation of 600 mW at 25 °C. The DC current gain (hFE) ranges from 420 to 800 at Ic = 2 mA and Vce = 5 V, with a transition frequency of 150 MHz. The base-emitter on voltage is up to 0.77 V at Ic = 10 mA, and the collector-earth saturation voltage is 0.6 V at Ic = 100 mA and Ib = 5 mA. The output capacitance is 4.5 pF at Vcb = 10 V and f = 1 MHz. The operating and storage junction temperature range is from -65 °C to +200 °C.
BIPOLAR TRANSISTOR, NPN, 25V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Continuous Collector Current:200mA; Power Dissipation:600mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:-; MSL:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 14M4491 |
| Product Name | Bipolar Transistor, Npn, 25V, To-18; Transistor Polarity Multicomp Pro |
| Polarity | NPN |