The BC109B is an NPN silicon planar epitaxial transistor in a TO-18 metal can package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 25V, a continuous collector current of 200mA, and a power dissipation of 600mW at 25°C. The DC current gain (hFE) ranges from 200 to 450 at Ic=2mA and Vce=5V. The transition frequency is 150MHz. The device operates with a junction temperature range of -65°C to +200°C and uses through-hole mounting with three pins.
BIPOLAR TRANSISTOR, NPN, 25V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Continuous Collector Current:200mA; Power Dissipation:600mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 14M4490 |
| Product Name | Bipolar Transistor, Npn, 25V, To-18; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
