multicomp PRO Diode, Ultrafast Recovery, 100Ma, 30V, Dfn1006; Diode Configuration Multicomp Pro BAT54LP-7

Description
DIODE, ULTRAFAST RECOVERY, 100mA, 30V, DFN1006; Diode Configuration:Single ; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100mA; Forward Voltage Max:1V; Forward Surge Current:600mA; Operating Temperature Max:125°C RoHS Compliant: Yes
Description
DIODE, ULTRAFAST RECOVERY, 100mA, 30V, DFN1006; Diode Configuration:Single ; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100mA; Forward Voltage Max:1V; Forward Surge Current:600mA; Operating Temperature Max:125°C RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The Diode, Ultrafast Recovery, 100mA, 30V, DFN1006 is a Schottky Barrier Diode designed for applications requiring fast switching and low turn-on voltage. It features a maximum repetitive peak reverse voltage of 30V and a forward continuous current rating of 200mA, with a forward surge current capability of up to 600mA for short durations. The diode exhibits a low forward voltage drop, ranging from 0.24V to 0.5V depending on the forward current, and a reverse recovery time of 5ns, making it suitable for high-speed applications. The device is housed in an ultra-small surface mount package (DFN1006-2), which is advantageous for space-constrained designs. It also includes a PN junction guard ring for enhanced transient and ESD protection. The operating temperature range is from -65¬8C to +125¬8C, ensuring reliability in various environmental conditions. This diode is RoHS compliant, aligning with modern environmental standards.

Datasheet Summary
Powered by GS/AI

The Diode, Ultrafast Recovery, 100mA, 30V, DFN1006 is a Schottky Barrier Diode designed for applications requiring fast switching and low turn-on voltage. It features a maximum repetitive peak reverse voltage of 30V and a forward continuous current rating of 200mA, with a forward surge current capability of up to 600mA for short durations. The diode exhibits a low forward voltage drop, ranging from 0.24V to 0.5V depending on the forward current, and a reverse recovery time of 5ns, making it suitable for high-speed applications. The device is housed in an ultra-small surface mount package (DFN1006-2), which is advantageous for space-constrained designs. It also includes a PN junction guard ring for enhanced transient and ESD protection. The operating temperature range is from -65¬8C to +125¬8C, ensuring reliability in various environmental conditions. This diode is RoHS compliant, aligning with modern environmental standards.

Suppliers

Company
Product
Description
Supplier Links
Diode, Ultrafast Recovery, 100Ma, 30V, Dfn1006; Diode Configuration Multicomp Pro - 66W0882 - Newark, An Avnet Company
Chicago, IL, United States
Diode, Ultrafast Recovery, 100Ma, 30V, Dfn1006; Diode Configuration Multicomp Pro
66W0882
Diode, Ultrafast Recovery, 100Ma, 30V, Dfn1006; Diode Configuration Multicomp Pro 66W0882
DIODE, ULTRAFAST RECOVERY, 100mA, 30V, DFN1006; Diode Configuration:Single ; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100mA; Forward Voltage Max:1V; Forward Surge Current:600mA; Operating Temperature Max:125°C RoHS Compliant: Yes

DIODE, ULTRAFAST RECOVERY, 100mA, 30V, DFN1006; Diode Configuration:Single; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100mA; Forward Voltage Max:1V; Forward Surge Current:600mA; Operating Temperature Max:125°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Diodes
Product Number 66W0882
Product Name Diode, Ultrafast Recovery, 100Ma, 30V, Dfn1006; Diode Configuration Multicomp Pro
RoHS Compliant RoHS
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