The 2N6668 is a silicon Darlington power transistor in a TO-220 package, designed for general-purpose amplifier and low-speed switching applications. It has a collector-emitter voltage rating of 80V, a continuous collector current of 10A, and a total power dissipation of 65W at 25°C, derating at 0.52W/°C above that temperature. The transistor has a minimum DC current gain of 1,000 at 5A collector current and a maximum collector-emitter saturation voltage of 2V at 5A collector current and 10mA base current. The device operates over a junction temperature range of -65°C to +150°C, with a thermal resistance from junction to case of 1.92°C/W. Physical dimensions are provided for the TO-220 package, with pin configuration: 1-base, 2-collector, 3-emitter, and 4-collector (case). It meets RoHS compliance.
BIPOLAR TRANSISTOR, PNP -80V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:65W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 98K6263 |
| Product Name | Bipolar Transistor, Pnp -80V To-220; Transistor Polarity Multicomp Pro |
| Polarity | PNP |