The 2N6476 is a PNP silicon transistor in a TO-220 package designed for switching and amplifier applications, including regulator and high-fidelity audio stages. It has a collector-emitter voltage rating of 120 V, a continuous collector current of 4 A, and a total device dissipation of 40 W at 25°C, derating at 0.32 W/°C above 100°C. The operating junction temperature range is -65°C to +150°C, with a lead temperature limit of +235°C for 10 seconds. The device has a gain-bandwidth product of 4 MHz, a collector-emitter saturation voltage of up to 2.5 V at 4 A collector current and 2 A base current, and a DC current gain ranging from 2 to 150. Its pin configuration is base, collector, emitter, collector, with collector connected to pins 2 and 4. Dimensions are specified in millimetres, with overall length up to 31.24 mm.
BIPOLAR TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:4MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0738 |
| Product Name | Bipolar Transistor, Pnp, -120V; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
| Package Type | TO-3 |
| IC(max) | 4000 milliamps |
